Low Field Mobility of Ultra-Thin SOI N- and P-MOSFETs: Measurements and Implications on the Performance of Ultra-Short MOSFETs

Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at different temperatures using a special test structure able to circumvent parasites resistance effects. At large inversion densities N sub (inv) ultra-thin SOI mobility can be higher than in heavily doped bulk MOS due a lower effective field and it is largely insensitive to silicon thickness T sub (Si). However, at small N sub (inv) the mobility is clearly reduced for ultra-short MOS transistor performance at device simulation level.