Low Firing Temperature-Stable Dielectric Compositions Based on Bismuth Nickel Zinc Niobates

New low sintering dielectric materials with small temperature coefficients have been developed. The newly developed materials are based on the Bi sub 2 (ZnNb sub 2) O sub 9 and Bi sub 3 (Ni sub 2 Nb) O sub 9 system with a bismuth layered crystal structure. Preliminary results showed that these materials have relatively large dielectric constants of ~80-100, rather small temperature coefficients of = 20x10 sup -6/C, and relatively large Q values of 2000-3000. Furthermore, these materials can be sintered at temperatures ranging from 850 to 950C and these low sintering temperatures permit the use of less expensive Ag electrode.