LOW INTERNAL LOSS SEPARATE CONFINEMENT HETEROSTRUCTURE InGaAs/InGaAsP QUANTUM WELL LASER.
01 January 1987
We describe the structure and properties of a high performance InGaAs/InGaAsP separate confinement heterostructure multiple quantum well laser operating at 1.54microns. The laser has low threshold current (18mA), high quantum efficiency (22%/facet), high CW output power (42mW/facet) and weak dependence of the threshold currents and efficiencies on cavity length.