Low noise Ga0.47In0.53As photoconductive detectors using Fe compensation.

We demonstrate a low-noise Ga0.47In0.53As photoconductive detector prepared by liquid phase epitaxy using Fe compensation. A carrier concentration as low as 1.8x10(13)cm(-3) and a Hall mobility as high as 5390 cm(2)/Vs have been achieved. This has improved the noise current by 3.7 dB but reduced the gain (~ 15) by 4.8 dB as compared to high-mobility undoped detector grown by vapor phase epitaxy. The Fe incorporation have resulted in a factor of two improvement in the fall time (~ 1.2 ns), which will reduce the amount of equalization required and hence improve the dynamic range of the detector.