Low pressure chemical vapor deposition of tantalum silicide.
01 January 1986
A process for the deposition of tantalum disilicide by Low Pressure Chemical Vapor Deposition (LPCVD) is described. The deposition chemistry involves the reaction of SiH4 with TaCl5 to produce a tantalum rich silicide. The process sequence requires the deposition of undoped polysilicon followed by the deposition of tantalum silicide in a single reactor.