Low Temperature Growth of Zinc Chalcogenides By Organometallic Vapor Phase Epitaxy Using Novel Group VI Precursors

The growth of the wide gap II-VI semiconductors ZnSe and ZnS by Organometallic Vapor Phase Epitaxy (OMVPE) has been hindered by the lack of high quality source materials, especially for the group VI elements. The usual method of deposition uses the hydrides of S and Se, H sub 2 S and H sub 2 Se. However, in this case, severe parasitic side reactions which occur which lead to poor morphology, and growth rate non-uniformities. On the other hand, the use of simple alkyl compounds such as Et sub 2 S, Me sub 2 Se, and Et sub 2 Se requires very high growth temperatures (-500C), which degrades the material properties because of native defects, etc.