Low Temperature Growth of Zinc Selenide by Organometallic Vapor Phase Epitaxy Using a Disk Plasma Lamp

The growth of the wide gap II-VI semiconductors ZnSe and ZnS by Organometallic Vapor Phase Epitaxy (OMVPE) has been hindered by the high growth temperatures (typically in the range of 500C) necessary when alkyl selenium and sulfur compounds are used as sources. Alternative approaches using the hydride group VI sources (H sub 2 Se and H sub 2 S) have also met with difficulty because of parasitic prereactions between the hydrides and the alkyl zinc source, typically diethylzinc (DEZ).