Low Temperature OMVPE Growth of CdTe Using a New Organotellurium Source.
01 January 1987
The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250C, using a new tellurium source, dimethylditelluride. This compound decomposes at a much lower temperature than the corresponding monotelluride, apparently by reacting with a cadmium containing species to eliminate one tellurium atom. As a result, the temperature necessary for deposition of CdTe has been lowered from the range of 400C, thus making completely thermally driven chemical vapor deposition of II-VI compounds possible at much lower temperatures.