Low temperature photoluminescence from InGaAs/InP quantum wires and boxes.
01 January 1987
InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ~300angstroms. These artificial structures exhibit intense low temperature photoluminescence and show exciton shifts of 8-14 meV expected of low dimensional confinement. Low surface recombination velocity characteristics of InP and its alloys should allow luminescence studies of features as small as ~30angstroms under moderate excitation intensities.