Low Temperature synthesis of II-VI Semiconductor Materials
27 August 1987
Recent developments in the organometallic growth of II-VI compounds such as photolysis assisted growth and the interdiffused multilayer process (IMP) have shown the feasibility of high quality growth of Hg(x)Cd(1-x)Te for example, at temperatures low enough to achieve sharp interfaces as well as control of residual carrier concentration. However, the present photolysis process suffers from slow growth rates, and the requirement of a high intensity light source adds a degree of complication which might be avoided if a completely thermal low temperature process were possible.