Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires

A one-dimensional active region consisting of 20-period T-shaped GaAs/AlGaAs quantum wires of 14x6nm(2) combined with a well-defined current-confinement scheme has been utilized to obtain a low-threshold-current high-efficiency laser. A threshold current as low as 0.27 mA, a single-mode cw output power of 0.13 mW at 1 mA injection current, and a differential quantum efficiency of 12% were achieved at 30 K using a quantum-wire laser with a 500-mu m-long Fabry-Perot cavity coated by high-reflectivity thin metals.