Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition.

We have fabricated low-threshold, high-quantum-efficiency, room-temperature AlGaAs-GaAs double heterojunction injection lasers from epitaxial structures grown by metalorganic chemical vapor deposition directly on Si substrates. These devices have broad area (125micron x 250micron) pulsed threshold current densities as low as J sub th = 3.5kA/cm sup 2 at ~23C.) Ridge- waveguide stripe-geometry lasers (5micron x 250micron) have pulsed threshold currents as low as 130mA at ~23C.