Low Voltage Flash Memory by Use of a Substrate Bias

The talk will review the physical phenomenon and application of enhanced gate current injection by use of substrate bias. Recently, there has been a renewed interest in the carrier heating process known as "Secondary Ionization Induced Substrate Hot-Electron" injection, by which an enhanced injection gate current in MOSFET devices is observed when applying a substrate bias. Monte Carlo simulations suggested that the origin of enhanced injection current is an impact ionization feedback mechanism.