LPE of Buried Heterostructure Laser Devices.
01 January 1986
The LPE growth of lasers of current interest is described with emphasis on critical growth steps necessary for the successful formation of the devices in both the AlGaAs and InGaAsP systems. The lasers include conventional buried heterostructures, channel substrate and inverted rib waveguide, buried crescent, double channel, mesa substrate and strip buried heterostructure lasers. The contrasts and variations of the growth processes in the two material systems are discussed. This review is to be published in "Progress in Crystal Growth and Characterization" by Pergamon Press Ltd. and is a summary of published studies of LPE growth both at AT&T Bell Laboratories and at other laboratories.