Luminescence in high purity In(0.53)Ga(0.47)As.
01 January 1984
We have investigated luminescence processes in high purity In(0.53) Ga(0.47) as grown by liquid phase epitaxy on InP substrate. The origins of luminescence processes have been determined by studying the dependence of emission intensity and spectrum on temperature. We show that exciton- neutral donor complex dominates the luminescence at 2K.