Magnetic and structural properties of Mn-implanted GaN

High doses (10(15)-5x10(16) cm(-2)) of Mn+ ions were implanted into p-GaN at similar to 350 degreesC and annealed at 700-1000 degreesC. At the high end of this dose range, platelet structures of GaxMn1-xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to similar to 250 K. At low doses, the implanted led to a buried band of defects at the end of the ion range. (C) 2001 American Institute of Physics.