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Magneto-optics and strain effects in GaInAs-AlInAs and GaInAs- InP quantum wells.

01 January 1986

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Transitions between the Landau levels of the lowest electron and hole sub-bands have been observed in the inter-band optical absorption of a modulation doped Ga(.47)In(.53)As-Al(.48)In (.52)As superlattice and a Ga(.3)In(.7)As-InP strained layer superlattice, in magnetic fields up to 16T. In the unstrained sample, the energies of transitions up to 250meV above the GaInAs band gap were found to be well described by a parabolic model for the heavy hole band and the model of Bowers and Yafet for the conduction band.