Mask blank fabrication, pattern transfer, and mounting distortion simulations for the 8-in. format SCALPEL mask
01 September 2001
The electron-beam projection lithography technique known as scattering with angular limitation projection electron-beam lithography (SCALPEL) is capable of producing linewidths of 100 nm and smaller, making it a leading candidate for replacing the current lithographic technique, deep ultraviolet (DUV). Critical to the success of SCALPEL is the creation of a low-distortion mask. Finite element modeling allows for the efficient identification of pattern-specific distortions of the mask membrane. Results pertinent to the current design of the 8-in. format mask are presented. (C) 2001 Elsevier Science BY All rights reserved.