MBE Growth of Graded Band Gap Quaternary Al sub (x) Ga sub (y) In sub (1-x-y) As Multilayer Heterostructures on InP: Application to a Novel Avalance Photo-Diode with Ultra High Ionization Ratio
20 October 1986
In this paper we first describe the growth of device quality compositionally graded quaternary Al sub (x) Ga sub (y) In sub (1-x-y) As on InP by Molecular Beam Epitaxy (MBE). Next we describe growth and operation of a novel PIN avalanche photo-diode (APD) which incorporates such composionally graded epilayers in I region.