Measurement of 1.3 and 1.55micron gain-switched semiconductor laser pulses with a picosecond IR streak camera and a high- speed InGaAs PIN photodiode.
01 January 1985
Gain-switched semiconductor laser pulses at 1.3 and 1.5micron were measured both with a high-speed InGaAs PIN photodiode and an IR synchroscan streak camera. Gain-switching characteristics and their bias dependence observed with both detection schemes are consistent with each other. Laser pulses of 24-30ps duration are observed. Picosecond pulses from a gain-switched 1.55micron DFB laser are found to be chirped, but not transform-limited.