Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga sub (0.47) In sub (0.53) As.

We discuss the use of Admittance Spectroscopy to measure the band offsets of semiconductor heterojunctions. By using this method to analyze the dynamic response of p-n junctions containing lattice-matched InP/Ga sub (0.47) In sub (0.53) As superlattices we can independently determine both conduction and valence band offsets for this materials system. We find that the sum of these offsets equals the known band-gap differences between InP and Ga sub (0.47) In sub (0.53) As and that the ratio of the conduction band offset to the valence band offset is 42:58.