Measurement of the Pressure Dependence of the Direct Bandgap of In sub 0.53 Ga sub 0.47 As Using Stimulated Emission

Stimulated emission, obtainable at high optical pumping levels, has been used to follow the pressure dependence of the I-band gap of molecular beam epitaxial In sub 0.53 Ga sub 0.47 As on (001) InP. Hydrostatic pressure was generated using a diamond anvil cell and all measurements were made at room temperature.