Metal-Insulator Transition in Si:P.

This paper presents a review of recent experimental work near the metal-insulator transition in phosphorus doped silicon (Si:P). It contains electrical conductivity and thermodynamic studies and both electron and nuclear spin resonance measurements for uncompensated and compensated samples. In the insulating phase the data is compared with the predictions for random Heisenberg antiferromagnet modelled by Bhatt and Lee. On the metallic side, a number of models are tested and the available data is found to support the existence of localized magnetic moments near the transition.