Mobility of the two-dimensional electron gas in GaAs-Al(x)Ga (1-x)As heterostructures.
01 January 1984
The mobility of the two-dimensional electron gas in GaAs-Al (x)Ga(1-x)As heterostructures was studied systematically in ten samples with density from 1.33X10(11)cm(-2) to 7.8X110 (11)cm(-2) in the temperature range T=4.2K to 300K. A theoretical calculation using the variational wavefunction was carried out for scattering by screened impurity ions, optical phonons, and acoustic phonons through deformation and piezoelectric couplings. Good quantitative agreement between theory and experiment was obtained with no adjustable parameters.