Models of impurity trapping during rapid solidification.

This paper is concerned with atomistic models of crystal growth in two-component systems. A simple analytic model is discussed first; this model reproduces the large trapping rates observed in experiments, and the effects of some interface properties such as segregation can be assessed. The influence of the atomic- scale interface structure is discussed using the results of Monte Carlo simulations of the kinetic Ising model. Variations in the concentration of bismuth with interface orientation in silicon can be explained by this model.