Modulation-doped Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As photodetector prepared by molecular beam epitaxy.

We report a large light sensitive area interdigitated Al(0. 48)In(0.52)As/Ga(0.47)In(0.53)As photoconductive detector. It shows a responsivity which is seven times better than that of a (GaIn)As pin photodiode. Preliminary results on a receiver sensitivity measurement show that this detector looks promising for long wavelength applications.