Modulation-doped field effect transistor based on a two-dimensional hole gas.

We report the successful operation of the first p-type modulation- doped field-effect transistor (p-MODFET). The channel consists of a two-dimensional hole gas at a GaAs/(AlGa)As heterostructure interface. This work represents the first demonstration of a p-type transistor that is the complement of the conventional n-MODFET.