Molecular beam epitaxial growth of abrupt InAsSb/GaSb heterostructures and superlattices lattice-matched to GaSb(100).
01 January 1986
Molecular beam epitaxial growth of InAsSb lattice-matched to GaSb is summarized in this report. High quality InAsSb is obtained with optimal flux ratios and stable substrate temperature. The quality is evaluated by double x-ray measurement, reflection high energy electron diffraction study, Nemarsky microscopy and photoluminescence.