Molecular beam epitaxial growth of In(1-x)Ga(x)as(1-y)Sb(y) lattice-matched to GaSb.

We have succeeded in growing epitaxial layers and multilayer heterostructures of In(1-x)Ga(x)As(1-y)Sb(y) quarternary and InAs0.92Sb0.08 ternary alloys lattice-matched to GaSb by molecular beam epitaxy. High quality epiilayers with lattice-mismatch delta a/a ~8x10-4, excellent morphology, and efficient photoluminescence were grown. The surface reconstructions during growth of these quarternary and ternary alloys were also investigated in detail using in-situ reflection high energy electron diffraction.