Molecular Beam Epitaxial Growth of InGaAsSb on (100) with emission wavelength in the 2 to 2.5microns Range.

Molecular beam epitaxial growth of In(x)Ga(1-x)As(y)Sb(1-y) lattice- matched to (100) GaSb substrate with x up to 0.26 is reported. As(2) and Sb(2) sources were used and growth was studied in the temperature range 490C ~ 570C. Alloys with room temperature photoluminescence peak wavelengths as long as 2.5microns have been grown with specular morphology. The low temperature photoluminescence of In(0.26)Ga(0.74) As(0. 19)Sb(0.81) measured at 1.8K has a narrow peak at 2.23microns with a full width at half maximum of 10 meV. This composition is inside the miscibility gap. These results indicate that metastable InGaAsSb alloys with optical device quality can be grown by molecular beam epitaxy.