Molecular beam epitaxy for III-V compound semiconductors.
01 January 1985
This memo reviews the preparation of III-V compound semiconductors by molecular beam epitaxy (MBE). The basic MBE process, the various in-situ surface diagnostic techniques, substrate preparation, and the effects of various growth conditions on the quality of the epilayers are covered in detail. The electronic transport and optical properties of single epilayers and quantum well structures of GaAs/A1xGA(1-x)As and Ga0.47In0.53As/InP are summarized.