Monolithic Integration of a Semiconductor Optical Amplifier and a Photodiode with Low Polarization Dependence for 100 Gb/s Links
01 June 2013
We demonstrate the monolithic integration of a buried heterostructure SOA and a deep ridge PIN photodiode for 100 Gbit/s OOK links at 1.55microns. Our structure allows separate optimization of the SOA and the photodiode. The integrated receiver presents simultaneously a peak responsivity of 88 A/W with a low polarization dependence loss (1 dB), a low noise figure (8.5 dB) and a wide 3-dB electrical bandwidth (¡Ö65 GHz). This corresponds to a very large gain-bandwidth product of 4.6 THz. To our knowledge, this is the first time that a monolithically integrated SOA-PIN receiver has achieved such performances.