Monolithically Integrated InGaAs/InP MSM-FET Photo-Receiver Prepared by Chemical Beam Epitaxy

We demonstrate the first monolithic integration of a Metal-Semiconductor-Metal (MSM) InGaAs photodetector with an FET and resistors into a high-impedance front-end photoreceiver circuit. The sample was grown in a single step by Chemical Beam Epitaxy, and standard processing steps for making FETs were used to fabricate the receiver circuit. The MSM photodetector has a dark current than 1 MuA. A bit error rate of less than 10 sup -9 at 200 Mbit/s has been achieved with this preliminary circuit for an optical power of -17 dBm.