Monolithically integrated receiver front end: InGaAs PIN-amplifier.
01 January 1987
Monolithically integrated InGaAs PIN-amplifiers have been successfully fabricated. The novel structure utilizes a vertical integration of PIN-diode and recessed gate InP MISFET, while maintaining a planar surface for fine line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFETs with aluminum phosphorous oxide as gate insulator. At 400 Mb/ s, the receiver sensitivity is better than -27 dBm for 1 x 10 sup (-9) bit-error rate.