Monte Carlo Study of High Performance Resists for SCALPEL Nanolithography

The semiconductor community continues to push the limits of device dimensions by exploring new high-resolution lithography technology. As part of the SCALPEL lithography resist program, our goal is to be able to print sub-100 nm structures at doses that will permit high throughput, reduce wafer heating and still maintain good process latitude. Using 100 KV exposures on a SCALPEL tool, 100 nm structures were printed at exposure dose of 5.8 mu C/cm sup 2 in positive resists. This resist also demonstrated resolution down to 80 nm isolated trenches at 5.4 mu C/cm sup 2. In negative resists, isolated 100nm were printed at a dose of 6.8 mu C/cm sup 2, and 80 nm structures at 7.2 mu C/cm sup 2 were resolved as well.