MOVPE Growth of High Performance Device Structures Using Tertiarybutylarsine as a Replacement for Arsine

A number of low vapor pressure organoarsenic compounds have been intensively investigated as alternatives to arsine for metalorganic vapor phase epitaxy (MOVPE) because of their inherent safety advantage over arsine, which is a toxic high-pressure gas. These have included methyl, ethyl, butyl and phenyl based arsenic compounds. However, the materials properties of films grown with these alternative compounds have generally been inferior to those achieved with arsine growth, either due to limitations in growth chemistry or source purity.