Nanoscale magnetic regions formed in GaN implanted with Mn
01 March 2001
Platelet structures with diameters less than 250 A and hexagonal symmetry were formed in GaN by high dose Mn+ ion implantation and annealing at 700-1000 degreesC. Selected-area diffraction pattern analysis indicates that these regions are GaxMn1-xN with a different lattice constant to the host GaN. The presence of the GaMnN corresponds to ferromagnetic behavior of the samples with a Curie temperature of similar to 250 K.