Output impedance of double heterojunction bipolar transistor as detectors for wireless terahertz communication
09 March 2018
In this communication we present an experimental characterization of InP-based DHBT through the measurement of the responsivity associated with a discussion of the complex impedance dependence. We show that a significative reduction of the output impedance can be obtained by applying a baseemitter bias thus improving substantially the conditions for impedance matching in telecommunication systems.