Patterned aluminum thin film growth via photochemically activated metalorganic chemical vapor deposition.

This paper is a review of our recent work, to be presented at the 1986 International Dry Process Symposium in Tokyo, Japan. Excimer laser photolysis of organo-aluminum adlayers has been used to catalytically activate the deposition of Al via thermal decomposition of triisobutylaluminum. Patterns with 2micron resolution and good spatial selectivity have been accurately reproduced. Metallizations were performed on Si, SiO(2) and Al(2)O(3) substrates with good success. To evaluate the utility of this process for real circuit applications, the laser activated deposition technique has been used in conjunction with standard photolithographic processing to fabricate metal-oxide field effect transistors. The successful fabrication of working devices indicates that the laser activated deposition technique is compatible with standard photolithographic patterning schemes and may provide a means for simplifying integrated circuit fabrication.