Performance of GaAs MESFETs on InP Substrates.
01 January 1989
GaAs MESFETs with 1micron gate length were fabricated on InP substrates, after growth of the heteroepitaxial material by MOCVD. The MESFETs exhibited extrinsic transconductances of 377 mS.mm sup (-1) the highest value yet reported for GaAs- on-InP devices. The drain I-V characteristic showed excellent saturation and pinch-off behaviour, with a knee voltage of 0.75V.