Planar Buried Heterostructure InP/GaInAs Lasers Grown Entirely by OMVPE.
01 January 1986
GainAs/InP Planar Buried Heterostructure (BH) lasers with semi- insulating blocking layers were grown in an "all" atmospheric OMVPE system. The growth consisted of two steps; a standard double-heterostructure wafer growth, followed by a semi-insulating Fe:Inp regrowth over an etched double channel. These lasers had current thresholds as low as 35ma and differential quantum efficiences of ~16% at a wavelength of 1.64microns. The maximum power output was 70-80mw pulsed and 8mw cw.