Planar InGaAs/InP photodiodes grown by metal-organic chemical vapor deposition.
01 January 1986
Planar InGaAs/InP heterostructure photodiodes have been fabricated from structures grown by atmospheric pressure metal-organic chemical vapor deposition. Diffused p-n junction devices of 75micron diameter have low dark currents (~20nA at -10V), good quantum efficiencies of ~50% (without AR coatings), and very high speed response (~35ps).