Plasma enhanced chemical vapor deposition of titanium diboride films.

Thin films of titanium borides were deposited at temperatures from 480C to 650C using a glow discharge and feed gases of TiCl4, BCl3, and H2. High quality films have been obtained that are smooth, shiny, and cracker-free; they have as-deposited resistivities as low as 200 microhm-cm. Films deposited with these moderate conditions have comparable properties to films deposited at high temperatures. Low temperature processing is advantageous for semiconductor applications. These films have potential use as diffusion barriers or in other applications requiring a conducting refractory material.