Point defect generation during phosphorus diffusion in silicon - Part II concentrations below solid solubility, ion implanted phosphorus.

In a previous paper is was established that phosphorus diffusion at concentrations above solid solubility generates silicon self-interstitials. Stacking faults were formed in a buried layer region located in the silicon bulk and extended into the substrate below the phosphorus diffusion in the surface. Simultaneous enhancement of arsenic buried layer diffusion and retardation of antimony buied layer diffusion were observed when the temperature was between 1000 and 1150C. In the present investigation, phosphorus predepositions at concentrations below the solid solubility were obtained by ion implantation. Diffusions were performed in low oxygen ambients and in nitrogen with a silicon nitride cap. Defect structures under the phosphorus diffused layer were studied on angle beveled surfaces using the Schimmel etch.