Polarization characteristics of distributed feedback semiconductor lasers.
01 January 1985
The threshold behavior of an index-guided distributed feedback semiconductor laser is analyzed theoretically with particular attention paid to the effect of internal stress on the polarization of the stimulated emission. Using parameters appropriate for a 1.55micron InGaAsP laser, a distributed feedback laser is found to have a lower threshold margin between TE and TM modes than a similar Fabry-Perot laser. This threshold margin is strongly dependent on the internal stress normal to the active layer and depending on its magnitude either TE or TM mode may reach threshold first.