Potential Profiling of InP/GaInAsP Double Heterostructure Using Auger Depth Profiling

Auger electron spectroscopy in conjunction with sputter depth profiling through semiconductor p-n junctions reveals a peak shift of Auger lines due to the built-in potential at the junction. This can be used to locate homo- and heterojunction positions accurately in multilayer semiconductor structures. We have applied this technique to identify the p-n junction position in GaInAsP/InP heterostructures consisting of n-InP, undoped GaInAsP, p-InP, and p-GaInAsP layers grown by LPE.