Potential Well Shape U(z) = U sub 0 |z over (L sub z /2)| sup (2/3) with GaAs/Al sub x Ga sub (1-x) As System.

Photoluminescence and excitation spectra at 6K show that a potential well (GaAs/AlGa sub (1-x) As) of shape U(z) = U sub 0 |z over (Lz/2)| sup (2/3) grown by molecular beam epitaxy has an energy dependence proportional to the square root of the quantum number. Using a simple approximation the eigenvalues for this potential are derived. The experimental data can be fitted accurately with a more complicated method which still shows the same energy dependence.