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    Precipitation Phenomena Associated With Ultra-high Be Doping of Ga Sub (0.47) In Sub (0.53) As By MBE

Precipitation Phenomena Associated with Ultra-high Be Doping of Ga sub (0.47) In sub (0.53) As by MBE

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Ultra-high Be doping (>=1x10 sup 20 cm sup -3) of Ga sub 0. 47 In sub 0.53 As has a number of potentially desirable applications including use in high speed heterostructure bipolar transistors. In this paper, we report the results of a study of Be doping of Ga sub 0.47 In sub 0.53 As as a function of temperature between 365 and 500C. The Ga sub 0.47 In sub 0.53 As samples used in this study were grown by gas source molecular beam epitaxy (GSMBE) using decomposed AsH sub 3 and PH sub 3 for generation of As sub 2 and P sub 2 beams and elemental effusion cells for the Ga, In and Be sources.