Preparation and Evaluation of Resist Resins for 193 nm Lithography Based on Charge-Transfer Polymerization of Maleic Anhydride with Tricyclo(5,1,1.02,6)dec-3-enyl Derivatives

New microlithography technology evolves towards use of short wavelength UV radiation, which requires from new resist materials to combine high UV transparency with dry etch stability. This requirement is met by introducing alicyclic moieties into the polymer chain of a resist resin. Since cyclic olefins do not readily undergo polymerization under free radical conditions (necessary to ensure metal-free environment), alicyclic moieties are introduced by charge-transfer polymerization of cyclic olefines with maleic anhydride. For example, copolymerization of norbornene or nonbornene derivatives with maleic anhydride is widely used for preparation resist materials for 193 nm lithography. In this paper, we will describe our work on the alternative charge-transfer system of maleic anhydride (MA)/tricyclo[5.2.1.02,6]dec-3-enyl (TCD) derivatives which should impart the resist polymer with higher alicyclic content and, therefore, improve the dry etch resistance of the resist.