Preparation of bulk and thin film Ta(2)O(5) by the sol-gel process.

We have prepared bulk and thin film Ta(2)O(5) by the sol-gel process. Thin film Ta(2)O(5) is prepared by spin-coating Si wafers when Ta(2)O(5) is in the form of sols. A thickness uniformity of +- 2.5% is achieved across a 3 in. wafer. After firing, shrinkage of the film is limited to the thickness dimension, with a shrinkage of 50% at temperatures above 500C. The onset of crystallization is determined to be between 635 and 650C.